【R&D Theme 1】
Realization of spintronics devices with higher reliability, higher density and lower power

We are developing nonvolatile memory device with 1) excellent rewrite endurance, 2) future oriented shrink technology and 3) high energy saving performance and high integration in integrated circuits.

【R&D Theme 2】
Realization of ultra lower power consumption by spintronics nonvolatile integrated circuits and its measurement technologies

We are doing research on process technology, measurement technology, and integrated circuit technology for connecting materials and device development to Spintronics nonvolatile integrated circuits as fully collaborative research.

【R&D Theme 3】
Realization of GaN/Si hybrid power integrated circuits with GaN on Si and Si power devices

We are doing research on the crystal growth for cubic GaN power device on Si(100) substrate capable of normally-off operation and on the development of power module technology to induce full advantage of the excellent high frequency characteristics for GaN/Si power devices.

【R&D Theme 4】
Realization of next generation transportation system by advanced automatic judgement system and hybrid power integrated circuits

We are doing research on technology realizing dramatically shortened learning time (1/100) by hybridization of spintronics element and CMOS circuit and on analog-based neuromorphic technology using of nonvolatile function by spintronics, and we are creating LSI's circuits and architecture realizing intelligent recognition judgement.