CIES Consortium

Industry-Academic Collaboration

Power Electronics Module Technology

R&D of WBG Power Module Technology

In this research theme, industry-academia collaboration is underway to develop power module technology that maximizes the features of wide bandgap (WBG) power devices such as SiC-MOSFETs and GaN on Si lateral power devices, which combine low loss and high speed. This will contribute to the realization of high-performance electric vehicles (EVs), compact and high-efficiency power supplies for data centers, and smart cities that optimize power supply operations.
Following technologies are being developed.

1. Voltage and current oscillation suppression technology for WBG power modules
   Development of low-inductance module technology to suppress voltage and current oscillation and spike voltage during switching while taking advantage of the high-speed performance of WBG power devices.
   Development of active gate drive circuit technology.
2. low thermal resistance technology
   Development of high thermal conductivity insulating substrate technology to suppress temperature rise during high frequency operation of WBG power chips, which are becoming smaller and higher power density.
3. high heat dissipation technology
   Development of new air-cooled and water-cooled cooler technologies to cope with the increasing capacity of WBG power devices.