Tohoku University Center for Innovative Integrated Electoric Systems

Tohoku University

J-Innovation HUB
DAY 1 Sunday, March 24, 2019
International Symposium
DAY 2 Monday, March 25, 2019
CIES Progress Report
DAY 3 Tuesday, March 26, 2019
JST OPERA / ACCEL symposium
ACCESS

5th CIES Technology Forum

DAY 3 (Tuesday, March 26, 2019)   JST OPERA / ACCEL symposium

Registration desk open at 8:15am

JST OPERA Symposium

9:00-9:20 Welcome Address Yoshinori Yajima (Tohoku Univ.)
Guest Address Director, University-Industry Collaboration and Regional R&D Division, Science and Technology Policy Bureau, MEXT Masaaki Nishijo (MEXT)
Director, Department of Innovation Platform, JST Noguchi Yoshihiro (JST)
9:20-9:50 Keynote
Approach on Cascaded SST Technology of HITACHI aiming for innovation in power conversion
Akihiko Kanouda (HITACHI)
9:50-10:05 OPERA Overview Tetsuo Endoh (Tohoku Univ.)
10:05-10:25 Shape-anisotropy magnetic tunnel junction for large-capacity STT-MRAM Shunsuke Fukami (Tohoku Univ.)
10:25-10:45 Basic technology for Intelligent transport system Masanori Natsui (Tohoku Univ.)
10:45-11:05 R&D for testing of spintronics-based LSI Hideo Sato (Tohoku Univ.)
Ryo Tamura, Naoyoshi Watanabe (ADVANTEST)
Shigeyuki Sato, Ryoichi Utsumi,
Naoya Koiso (Toei Scientific Industrial)
Masatomo Takahashi (TOKYO SEIMITSU)
Hidehiro Kiyofuji (MICRONICS JAPAN)
11:05-11:25 Power electronics technology with GaN on Si device Yoshikazu Takahashi (Tohoku Univ.)
11:25-11:45 The present and future of automotive electrification Kenichi Nonaka (KEIHIN)
11:45-12:05 Current status and future of power module technology Yoshinari Ikeda (FUJI ELECTRIC)
12:05-12:15 Closing remark Tetsuo Endoh (Tohoku Univ.)

JST ACCEL Symposium

13:30-13:50 Welcome Address Yoshinori Yajima (Tohoku Univ.)
Guest Address Director, Basic Research Promotion Division, Research Promotion Bureau, MEXT Tadatoshi Kaneko (MEXT)
Executive Director, JST Yoshimasa Goto (JST)
13:50-14:30 Keynote
A Constant Challenge to Low Power Consumption Device for IoE Society
Nobuhiro Misawa (MIFS)
14:30-14:40 ACCEL Overview Tetsuo Endoh (Tohoku Univ.)
14:40-15:20 Development of vertical BC-MOSFET and development to high density working memory and logic Tetsuo Endoh (Tohoku Univ.)
15:20-15:50 Control of interfacial atoms to support 3D structure MOSFET ①
Approach from computational science
Kenji Shiraishi (Nagoya Univ.)
Hiroyuki Kageshima (Shimane Univ.)
15:50-16:20 Control of interfacial atoms to support 3D structure MOSFET ②
Approach from nano measurement
Kohei Itoh (Keio Univ.)
Tetsuo Endoh (Tohoku Univ.)
Koji Izunome (GWJ)
16:20-16:50 Wafer technology for 3D Devices Koji Izunome (GWJ)
16:50-17:00 Closing remark Toru Masaoka (JST)