論文など
論文
2014年度
*Peer Reviewed Paper
| *1 | S. Ohuchida, K. Ito, and T. Endoh, “Impact of sub-volume excitation on improving overdrive delay product of sub-40nmperpendicular magnetic tunnel junctions in adiabatic regime and its beyond”, Japanese Journal of Applied Physics, Vol. 54, pp. 04DD05, March 2015. |
| *2 | T. Imamoto, Y. Ma, and T. Endoh, “Low-frequency noise reduction in vertical MOSFETs having tunable threshold voltage fabricated with 60 nm CMOS technology on 300 mm wafer process”, Japanese Journal of Applied Physic, Vol.54, pp.04DC11, March 2015. |
| *3 | K. Watanabe, S. Ishikawa, H. Sato, S. Ikeda, M. Yamanouchi, S. Fukami, F. Matsukura, and H. Ohno, “Dependence of magnetic properties of MgO/CoFeB/Ta stacks on CoFeB and Ta thicknesses”, Japanese Journal of Applied Physics, Vol. 54, pp.04DM04, March 2015. |
| *4 | H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, “Power-gated 32 bit microprocessor with a power controller circuit activated by deep-sleep-mode instruction achieving ultra-low power operation”, Japanese Journal of Applied Physics, Vol. 54, pp.04DE08, March 2015. |
| *5 | S. Miura, H. Honjo, K. Kinoshita, K. Tokutome, H. Koike, S. Ikeda, T. Endoh, and H. Ohno “Properties of perpendicular-anisotropy magnetic tunnel junctions fabricated over the bottom electrode contact”, Japanese Journal of Applied Physics, Vol. 54, pp.04DM06, March 2015 |
| *6 | D. Suzuki and T. Hanyu, “Nonvolatile field-programmable gate array using 2-transistor–1-MTJ-cell-based multi-context array for power and area efficient dynamically reconfigurable logic”, Japanese Journal of Applied Physics, Vol. 54, No. 4S, pp. 04DE01, March 2015. |
| *7 | K. Ito, S. Ohuchida, M. Muraguchi, and T. Endoh, “Landau–Lifshitz–Gilbert micromagnetic simulation on spin transfer torque efficiency of sub-30nm perpendicular magnetic tunnel junctions with etching damage”, Japanese Journal of Applied Physics, Vol. 54, pp.04DM01, February 2015. |
| *8 | T. Kariya, S. Tanoi, H. Morita, S. Kato, and T. Endoh, “Electrical Performance Evaluation for Spintronics Based Nonvolatile Logic Using Fine-Grained Power-Gating with Various Embedded Capacitor Package Configurations”, C - Abstracts of IEICE TRANSACTIONS on Electronics (Japanese Edition) ,Vol.J98-C, No.1, pp.8-17, January 2015. |
| *9 | D. Suzuki and T. Hanyu, “Magnetic-tunnel-junction based low-energy nonvolatile flip-flop using an area-efficient self-terminated write driver”, Journal of Applied Physics , Vol. 117, pp.17B504, January 2015. |
| *10 | S. Fukami, M. Yamanouchi, S. Ikeda, and H. Ohno, “Domain Wall Motion Device for Nonvolatile Memory and Logic — Size Dependence of Device Properties”, IEEE Transactions on Magnetics, Vol. 50, No. 11, pp.341006,November 2014. |
| *11 | K. Ito, S. Ohuchida, and T. Endoh, “Dependence of Sub-Volume Excitation on Structural and Material Parameters in Precessional Regime of Spin Transfer Torque Magnetization Reversal”, IEEE Transaction on Magnetics, Vol. 50, No. 11, pp.1402104, November 2014. |
| *12 | H. Honjo, S. Fukami, K. Ishihara, K. Kinoshita, Y. Tsuji, A. Morioka, R. Nebashi, K. Tokutome, N. Sakimura, M. Murahata, S. Miura, T. Sugibayashi, N. Kasai and H. Ohno, “Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device”, IEEE Transactions on Magnetics, Vol. 50, No. 11, pp. 06971768, November 2014. |
| *13 | A. Mochizuki, H. Shirahama, Y. Watanabe, and T. Hanyu, “Design of an Energy-Efficient Ternary Current-Mode Intra-Chip Communication Link for an Asynchronous Network-on-Chip”, IEICE Trans. on Inf. and Syst., Vol. E97-D, no. 9, pp.2304-2311, September 2014. |
| *14 | H. Sato, E. C. I. Enobio, M. Yamanouchi, S. Ikeda, S. Fukami, S. Kanai, F. Matsukura, and H. Ohno, “Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm”, Applied Physics Letters, Vol. 105, No.062403, pp. 1.4892924, August 2014. |
| *15 | S. Sato, Y. Hiroi, K. Yamabe, M.o Kitabatake, T. Endoh and M. Niwa, “Multiple breakdown model of carpet-bombing-like concaves formed during dielectric breakdown of silicon carbide metal–oxide–semiconductor capacitors”, Japanese Journal of Applied Physics, Vol.53, pp.08LA01, July 2014. |
