国際会議

論文など

2013年度

13	M. Yamanouchi, L. Chen, J. Kim, M. Hayashi, H. Sato, S. Fukami, S. Ikeda, F. Matsukura, and H. Ohno, "Three terminal magnetic tunnel junctions with CuIr channel", International Workshop on Spin-Orbit Torque 2013, Jeddah, Saudi Arabia, Feb. 25, 2013.
12	H. Sato, R. Koizumi, S. Ikeda, M. Yamanouchi, F. Matsukura, H. Ohno, "(Co100-XFeX)80B20 composition dependence of interface anisotropy in MgO/CoFeB/Ta stack structure", The 8th International Symposium on Metallic Multilayers (MML2013), Kyoto, Japan, May. 22, 2013.
11	H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura and H. Ohno, "Co/Pt multilayer based reference layers in magnetic tunnel junction for novolatile spintronics VLSIs", 2013 International Conference on Solid State Devices and Materials (SSDM 2013), Fukuoka, Japan, Sep. 26, 2013.
10	Y. Ma, T. Shibata, and T. Endoh, "An MTJ-Based Nonvolatile Associative Memory Architecture With Intelligent Power-Saving Scheme for High-Speed Low-Power Recognition Applications", IEEE International Symposium on Circuits and Systems (ISCAS), Beijing, China, May 21, 2013.
9	T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "A 1-Mb STT-MRAM with Zero-Array Standby Power and 1.5-ns Quick Wake-Up by 8-b Fine-Grained Power Gating", International Memory Workshop (IMW), Monterey, CA、USA, May 28, 2013
8	H. Koike, T. Ohsawa, and T. Endoh, "Verification of Simulation Time Improvement for SPICE Simulator using Built-in MTJ Model", International Workshop on Computational Electronics (IWCE), Nara, Japan, Jun. 5, 2013.
7	Y. Yoshida, H. Koike, M. Muraguchi, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "A Model Reflecting Preheat Effect by Two-step Writing Technique for High Speed and Stable STT-MRAM", International Workshop on Computational Electronics (IWCE), Nara, Japan, Jun. 5, 2013
6	T. Ohsawa, S. Miura, K. Kinoshita, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "A 1.5nsec/2.1nsec Random Read/Write Cycle 1Mb STT-RAM Using 6T2MTJ Cell with Background Write for Nonvolatile e-Memories", Symposium on VLSI Circuits (VLSIC), Kyoto, Japan, Jun. 13, 2013.
5	S. Ohuchida, and T. Endoh, "A Study of Time-Resolved Switching Characteristic in Perpendicular Magnetic Tunnel Junction", Asia-Pacific Workshop on Fundamentals and Applications of Advanced Semiconductor Devices (AWAD), Seoul, Korea, Jun. 26, 2013.
4	T. Ohsawa, S. Miura, H. Honjo, K. Kinoshita, T. Hanyu, S. Ikeda, H. Ohno, and T. Endoh, "A 4x4 Nonvolatile Multiplier Using Novel MTJ-CMOS Hybrid Latch and Flip-Flop", International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 27, 2013.
3	T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "Studies on Selective Devices for Spin-Transfer-Torque Magnetic Tunnel Junctions", International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 27, 2013.
2	H. Koike, T. Ohsawa, S. Miura, H. Honjo, S. Ikeda, T. Hanyu, H. Ohno, and T. Endoh, "Wide Operational Margin Capability of 1kbit STT-MRAM Array Chip with 1-PMOS and 1-Bottom-Pin-MTJ Type Cell", International Conference on Solid State Devices and Materials (SSDM), Fukuoka, Japan, Sep. 27, 2013.
1	Noboru Sakimura, Yukihide Tsuji, Ryusuke Nebashi, Hiroaki Honjo, Ayuka Morioka, Kunihiko Ishihara, Keizo Kinoshita, Shunsuke Fukami, Sadahiko Miura, Naoki Kasai, Tetsuo Endoh, Hideo Ohno, Takahiro Hanyu, and Tadahiko Sugibayashi, "A 90-nm 20-MHz Fully Nonvolatile Microcontroller for Standby-Power Critical Applications", IEEE International Solid-State Circuits Conference (ISSCC2014), pp. 184 - 185, San Francisco, CA, USA, Feb.9-13, 2014.