Publications
FY 2019
Journal Papers
*Peer Reviewed Paper
| *46 | Y. Saito, N. Tezuka, S. Ikeda, and T. Endoh, "Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system", Applied Physics Letters, 116, 132401, 2020/3/30. |
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| *45 | Y. Ma, S. Miura, H. Honjo, S. Ikeda, and T. Endoh, "A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching", Japanese Journal of Applied Physics, 59, SGGB18, 2020/3/9. |
| *44 | J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, and M. D. Stiles, "Neuromorphic spintronics", Nature Electronics, https://doi.org/10.1038/s41928-019-0360-9, 2020/3/2. |
| *43 | T. Li, Y. Ma, H. Shen, and T. Endoh, "FPGA Implementation of Real-time Pedestrian Detection Using Normalization-based Validation of Adaptive Features Clustering", IEEE Transactions on Vehicular Technology, XX, XX. 1-12, 2020/2/28. |
| *42 | D. Suzuki and T. Hanyu, "Design of a cost-efficient controller for realizing a data-shift-minimized nonvolatile field-programmable gate array", Japanese Journal of Applied Physics, 59, SGGB13, 2020/2/28. |
| *41 | K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura , H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato , and T. Endoh, "Novel Quad-Interface MTJ Technology and Its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm", IEEE Transactions on Electron Devices, 67, 995, 2020/2/12. |
| *40 | R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, Y. Nagai, T. Endoh, and K. M. Itoh, "Oxidation-enhanced Si self-diffusion in isotopicallymodulated silicon nanopillars", Journal of Applied Physics, 127, 045704, 2020/1/28. |
| *39 | T. V. A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, and Y. Endo, "Magnetic properties of Co film in Pt/Co/Cr2O3/Ptstructure", AIP Advances, 10, 015152, 2020/1/28. |
*38 | V. Babenko, Y. Fan, V.-P. Veigang-Radulescu, B. Brennan, A. J. Pollard, O. Burton, J. A. Alexander-Webber, R. S. Weatherup, B. Canto, M. Otto, D. Neumaier and S. Hofmann, "Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride", 2D Materials, 7, 024005, 2020/1/20. |
| *37 | T. Li, Y. Ma, and T. Endoh, "Normalization-based validity index of adaptive K-means clustering for multi-solution application", IEEE Access, 8, 9403, 2020/1/8. |
| *36 | N. Onizawa, R. Arakawa, and T. Hanyu, "Design of an MTJ-based Nonvolatile Multi-context Ternary Content-Addressable Memory", Journal of Applied Logics, 7, 89, 2020/1/1. |
| *35 | T. Ogasawara, M. Oogane, M. Al-Mahdawi, M. Tsunoda, and Y. Ando, "Composition dependence of the second-order interfacial magnetic anisotropy for MgO/CoFeB/Ta films", AIP Advances, 9, 125053, 2019/12/30. |
| *34 | H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, and T. Endoh, "Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers", AIP Advances, 9, 125330, 2019/12/26. |
| *33 | Y. Saito, N. Tezuka, S. Ikeda, H. Sato, and T. Endoh, "Spin Hall effect investigated by spin Hall magnetoresistance in Pt100-xAux /CoFeB systems", AIP Advances, 9, 125312, 2019/12/19. |
| *32 | T. Suemitsu and I. Makabe, "Effective Schottky Barrier Height Model for Ga- and N-polar GaN by Polarization-Induced Surface Charges with Finite Thickness", Physica Status Solidi B, 2020, 1900528, 2019/12/17. |
| *31 | R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami, and H. Ohno, "Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn", Applied Physics Letters, 115, 242404, 2019/12/11. |
| *30 | H. Gamou, K. Shimose, R. Enoki, E. Minamitani, A. Shiotari, Y. Kotani, K. Toyoki, T. Nakamura, Y. Sugimoto, M. Kohda, J. Nitta, and S. Miwa, "Detection of Spin Transfer from Metal to Molecule by Magnetoresistance Measurement", Nano Letters, 20, 75, 2019/12/10. |
| *29 | S. Ye, K. Yamabe, and T. Endoh, "Variance Reduction during the Fabrication of Sub-20 nm Si Cylindrical Nanopillars for Vertical Gate-All-Around Metal-OxideSemiconductor Field-Effect Transistors", ACS OMEGA, 4, 21115-21121, 2019/12/3. |
| *28 | M. Niwa, "Study on ion transport mechanism in ultrathin electrolyte membrane for low temperature operation of solid oxide fuel cell", Science Impact, 2019, 10, 53, 2019/12/1. |
| *27 | 深見俊輔、大野英男 「スピン軌道トルク素子と脳型情報処理応用」 日本磁気学会誌『まぐね』、14 341-347、2019/12/1. |
| *26 | T. Ogasawara, M. Oogane, M. Al-Mahdawi, M. Tsunoda, and Y. Ando, "Effect of second-order magnetic anisotropy on nonlinearity of conductance in CoFeB/MgO/CoFeB magnetic tunnel junction for magnetic sensor devices", Scientific Reports, 9, 17018, 2019/11/19. |
| *25 | T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno, "Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles", Nature Communications, 10, 5153, 2019/11/14. |
| *24 | H. Kageshima, Y. Yajima, K. Shiraishi, and T. Endoh, "First-principles study of pressure and SiO-incorporation effect on dynamicalproperties of silicon oxide", Japanese Journal of Applied Physics, 58, 111004, 2019/10/24. |
| *23 | S. Ye, K. Yamabe, and T. Endoh, "Low-density oxide grown thermally on sidewall of Si nanopillars", Materials Letters, 258, 126780, 2019/10/12. |
| *22 | T. Saino, S. Kanai, M. Shinozaki, B. Jinnai, H. Sato, S. Fukami, and H. Ohno, "Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime", Applied Physics Letters, 115, 142406, 2019/10/1. |
| *21 | N. Fang and K. Nagashio, "Quantum-mechanical effect in atomically thin MoS2 FET", 2D Materials, 7, 014001, 2019/10/1. |
| *20 | N. Fang, S. Toyoda, T. Taniguchi, K. Watanabe, and K. Nagashio, "Full energy spectra of interface state densities for n– and p-type MoS2 field-effect transistors", Advanced Functional Materials, 29, 1904465, 2019/9/30. |
| *19 | S. Gupta, F. Matsukura, and H. Ohno, "Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction", Journal of Physics D: Applied Physics, 52, 495002, 2019/9/20. |
| *18 | W A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno and S. Datta, "Integer Factorization Using Stochastic Magnetic Tunnel Junctions", Nature, 573, 390–393, 2019/9/18. |
| *17 | H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, and T. Endoh, "Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions", Journal of Applied Physics, 126, 113902, 2019/9/17. |
| *16 | A. O. A Tanoh, J. Alexander-Webber, J. Xiao, G. Delport, C. A. Williams, H. Bretscher, N. Gauriot, J. Allardice, R. Pandya, Y. Fan, Z. Li, S. Vignolini, S. D. Stranks, S. Hofmann, A. Rao, "Enhancing Photoluminescence and Mobilities in WS2 Monolayers with Oleic Acid Ligands", Nano Letters, 19, 6299, 2019/8/16. |
| *15 | M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo , H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu, "A 47.14-μW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications", IEEE Journal of Solid-State Circuits, 54, 11, 2991-3004, 2019/8/13. |
| *14 | T. Saito, A. Aoki, J. Nitta, and M. Kohda, "Simultaneous evaluation of drift- and diffusion-induced spin-orbit fields in a (001) GaAs/AlGaAs two-dimensional electron gas", Applied Physics Letters, 115, 052402, 2019/7/31. |
*13 | A. Okada, Y. Takeuchi, K. Furuya, C. Zhang, H. Sato, S. Fukami and H. Ohno, "Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance", Physical Reviewe Applied, 12, 014040, 2019/7/23. |
| *12 | J. Chen, Z. Zhang, Y. Guo, "Schottky barrier height at metal/ZnO interface: A first-principles study", Microelectronic Engineering, 216, 111056, 2019/7/4. |
| *11 | Z. Zhang, Y. Guo, J. Robertson, "Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study", Microelectronic Engineering, 216, 111039 , 2019/6/5. |
| *10 | E. Asakura, M. Suzuki, S. Karube, J. Nitta, K. Nagashio and M. Kohda, "Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS2", Applied Physics Express, 12, 063005, 2019/5/31. |
| *9 | M. Niwa, A. Yasui, H. Honjo, S.Ikeda, T. Nakamura, and T. Endoh, "Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy", J. Appl. Phys. , 125, 203903, 2019/5/24. |
| *8 | Y. Endo, Y. Kawabea, T. Miyazakid, Y. Shimada, "Effect of Ga composition on the static and dynamic magnetic properties of Fe100-xGax films (18.5 ≤ x ≤ 33.4)", Journal of Magnetism and Magnetic Materials, 487, 165323, 2019/5/18. |
| *7 | S. Ye, K. Yamabe, and T. Endoh, "Oxidation-induced stress in Si nanopillars", Journal of Materials Science, 54, 11117–11126, 2019/5/10. |
| *6 | H. Gamou, Y. Du, M. Kohda, and J. Nitta, "Enhancement of spin current generation in epitaxial a-Ta/CoFeB bilayer", Physical Review B, 99, 184408, 2019/5/9. |
| *5 | Y. Saito, N. Tezuka, S. Ikeda, H. Sato, and T. Endoh, "Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W100-xTax /CoFeB systems", Appl. Phys. Express, 12, 053008, 2019/5/1. |
| *4 | Z. Zhang, Y. Guo, J. Robeortson, "Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces", Applied Physics Letters, 114 161601 , 2019/4/26. |
| *3 | S. Toyoda, T. Uwanno, T. Taniguchi, K. Watanabe, and K. Nagashio, "Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes", Applied Physics Express, 12, 055008, 2019/4/24. |
| *2 | A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno, |
| *1 | Y. Saito, A. V. Kolobov, P. Fons, K. V. Mitrofanov, K. Makino, J. Tominaga, J. Robertson, |