東北大学 国際集積エレクトロニクス研究開発センター







*46 Y. Saito, N. Tezuka, S. Ikeda, and T. Endoh,
"Large spin Hall effect and increase in perpendicular magnetic anisotropy in artificially synthesized amorphous W/Hf multilayer/CoFeB system",
Applied Physics Letters, 116, 132401, 2020/3/30.
*45 Y. Ma, S. Miura, H. Honjo, S. Ikeda, and T. Endoh,
"A free-extendible and ultralow-power nonvolatile multi-core associative coprocessor based on MRAM with inter-core pipeline scheme for large-scale full-adaptive nearest pattern searching",
Japanese Journal of Applied Physics, 59, SGGB18, 2020/3/9.
*44 J. Grollier, D. Querlioz, K. Y. Camsari, K. Everschor-Sitte, S. Fukami, and M. D. Stiles,
"Neuromorphic spintronics",
Nature Electronics, https://doi.org/10.1038/s41928-019-0360-9, 2020/3/2.
*43 T. Li, Y. Ma, H. Shen, and T. Endoh,
"FPGA Implementation of Real-time Pedestrian Detection Using Normalization-based Validation of Adaptive Features Clustering",
IEEE Transactions on Vehicular Technology, XX, XX. 1-12, 2020/2/28.
*42 D. Suzuki and T. Hanyu,
"Design of a cost-efficient controller for realizing a data-shift-minimized nonvolatile field-programmable gate array",
Japanese Journal of Applied Physics, 59, SGGB13, 2020/2/28.
*41 K. Nishioka, H. Honjo, S. Ikeda, T. Watanabe, S. Miura , H. Inoue, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato , and T. Endoh,
"Novel Quad-Interface MTJ Technology and Its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm",
IEEE Transactions on Electron Devices, 67, 995, 2020/2/12.
*40 R. Kiga, S. Hayashi, S. Miyamoto, Y. Shimizu, Y. Nagai, T. Endoh, and K. M. Itoh,
"Oxidation-enhanced Si self-diffusion in isotopicallymodulated silicon nanopillars",
Journal of Applied Physics, 127, 045704, 2020/1/28.
*39 T. V. A. Nguyen, Y. Shiratsuchi, H. Sato, S. Ikeda, T. Endoh, and Y. Endo,
"Magnetic properties of Co film in Pt/Co/Cr2O3/Ptstructure",
AIP Advances, 10, 015152, 2020/1/28.
*38 V. Babenko, Y. Fan, V.-P. Veigang-Radulescu, B. Brennan, A. J. Pollard, O. Burton, J. A. Alexander-Webber, R. S. Weatherup, B. Canto, M. Otto, D. Neumaier and S. Hofmann,
"Oxidising and carburising catalyst conditioning for the controlled growth and transfer of large crystal monolayer hexagonal boron nitride",
2D Materials, 7, 024005, 2020/1/20.
*37 T. Li, Y. Ma, and T. Endoh,
"Normalization-based validity index of adaptive K-means clustering for multi-solution application",
IEEE Access, 8, 9403, 2020/1/8.
*36 N. Onizawa, R. Arakawa, and T. Hanyu,
"Design of an MTJ-based Nonvolatile Multi-context Ternary Content-Addressable Memory",
Journal of Applied Logics, 7, 89, 2020/1/1.
*35 T. Ogasawara, M. Oogane, M. Al-Mahdawi, M. Tsunoda, and Y. Ando,
"Composition dependence of the second-order interfacial magnetic anisotropy for MgO/CoFeB/Ta films",
AIP Advances, 9, 125053, 2019/12/30.
*34 H. Honjo, T. V. A. Nguyen, M. Yasuhira, M. Niwa, S. Ikeda, H. Sato, and T. Endoh,
"Effect of capping layer material on thermal tolerance of magnetic tunnel junctions with MgO/CoFeB-based free layer/MgO/capping layers",
AIP Advances, 9, 125330, 2019/12/26.
*33 Y. Saito, N. Tezuka, S. Ikeda, H. Sato, and T. Endoh,
"Spin Hall effect investigated by spin Hall magnetoresistance in Pt100-xAux /CoFeB systems",
AIP Advances, 9, 125312, 2019/12/19.
*32 T. Suemitsu and I. Makabe,
"Effective Schottky Barrier Height Model for Ga- and N-polar GaN by Polarization-Induced Surface Charges with Finite Thickness",
Physica Status Solidi B, 2020, 1900528, 2019/12/17.
*31 R. Itoh, Y. Takeuchi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Stack structure and temperature dependence of spin-orbit torques in heterostructures with antiferromagnetic PtMn",
Applied Physics Letters, 115, 242404, 2019/12/11.
*30 H. Gamou, K. Shimose, R. Enoki, E. Minamitani, A. Shiotari, Y. Kotani, K. Toyoki, T. Nakamura, Y. Sugimoto, M. Kohda, J. Nitta, and S. Miwa,
"Detection of Spin Transfer from Metal to Molecule by Magnetoresistance Measurement",
Nano Letters, 20, 75, 2019/12/10.
*29 S. Ye, K. Yamabe, and T. Endoh,
"Variance Reduction during the Fabrication of Sub-20 nm Si
Cylindrical Nanopillars for Vertical Gate-All-Around Metal-OxideSemiconductor Field-Effect Transistors",
ACS OMEGA, 4, 21115-21121, 2019/12/3.
*28 M. Niwa,
"Study on ion transport mechanism in ultrathin electrolyte membrane for low temperature operation of solid oxide fuel cell",
Science Impact, 2019, 10, 53, 2019/12/1.
*27 深見俊輔、大野英男
日本磁気学会誌『まぐね』、14 341-347、2019/12/1.
*26 T. Ogasawara, M. Oogane, M. Al-Mahdawi, M. Tsunoda, and Y. Ando,
"Effect of second-order magnetic anisotropy on nonlinearity of conductance in CoFeB/MgO/CoFeB magnetic tunnel junction for magnetic sensor devices",
Scientific Reports, 9, 17018, 2019/11/19.
*25 T. Dohi, S. DuttaGupta, S. Fukami, and H. Ohno,
"Formation and current-induced motion of synthetic antiferromagnetic skyrmion bubbles",
Nature Communications, 10, 5153, 2019/11/14.
*24 H. Kageshima, Y. Yajima, K. Shiraishi, and T. Endoh,
"First-principles study of pressure and SiO-incorporation effect on dynamicalproperties of silicon oxide",
Japanese Journal of Applied Physics, 58, 111004, 2019/10/24.
*23 S. Ye, K. Yamabe, and T. Endoh,
"Low-density oxide grown thermally on sidewall of Si nanopillars",
Materials Letters, 258, 126780, 2019/10/12.
*22 T. Saino, S. Kanai, M. Shinozaki, B. Jinnai, H. Sato, S. Fukami, and H. Ohno,
"Write-error rate of nanoscale magnetic tunnel junctions in the precessional regime",
Applied Physics Letters, 115, 142406, 2019/10/1.
*21 N. Fang and K. Nagashio,
"Quantum-mechanical effect in atomically thin MoS2 FET",
2D Materials, 7, 014001, 2019/10/1.
*20 N. Fang, S. Toyoda, T. Taniguchi, K. Watanabe, and K. Nagashio,
"Full energy spectra of interface state densities for n– and p-type MoS2 field-effect transistors",
Advanced Functional Materials, 29, 1904465, 2019/9/30.
*19 S. Gupta, F. Matsukura, and H. Ohno,
"Properties of sputtered full Heusler alloy Cr2MnSb and its application in a magnetic tunnel junction",
Journal of Physics D: Applied Physics, 52, 495002, 2019/9/20.
*18 W A. Borders, A. Z. Pervaiz, S. Fukami, K. Y. Camsari, H. Ohno and S. Datta,
"Integer Factorization Using Stochastic Magnetic Tunnel Junctions",
Nature, 573, 390–393, 2019/9/18.
*17 H. Honjo, S. Ikeda, H. Sato, M. Yasuhira, and T. Endoh,
"Effect of surface modification treatment of buffer layer on thermal tolerance of synthetic ferrimagnetic reference layer in perpendicular-anisotropy magnetic tunnel junctions",
Journal of Applied Physics, 126, 113902, 2019/9/17.
*16 A. O. A Tanoh, J. Alexander-Webber, J. Xiao, G. Delport, C. A. Williams, H. Bretscher, N. Gauriot, J. Allardice, R. Pandya, Y. Fan, Z. Li, S. Vignolini, S. D. Stranks, S. Hofmann, A. Rao,
"Enhancing Photoluminescence and Mobilities in WS2 Monolayers with Oleic Acid Ligands",
Nano Letters, 19, 6299, 2019/8/16.
*15 M. Natsui, D. Suzuki, A. Tamakoshi, T. Watanabe, H. Honjo , H. Koike, T. Nasuno, Y. Ma, T. Tanigawa, Y. Noguchi, M. Yasuhira, H. Sato, S. Ikeda, H. Ohno, T. Endoh, and T. Hanyu,
"A 47.14-μW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications",
IEEE Journal of Solid-State Circuits, 54, 11, 2991-3004, 2019/8/13.
*14 T. Saito, A. Aoki, J. Nitta, and M. Kohda,
"Simultaneous evaluation of drift- and diffusion-induced spin-orbit fields in a (001) GaAs/AlGaAs two-dimensional electron gas",
Applied Physics Letters, 115, 052402, 2019/7/31.
*13 A. Okada, Y. Takeuchi, K. Furuya, C. Zhang, H. Sato, S. Fukami and H. Ohno,
"Spin-Pumping-Free Determination of Spin-Orbit Torque Efficiency from Spin-Torque Ferromagnetic Resonance",
Physical Reviewe Applied, 12, 014040, 2019/7/23.
*12 J. Chen, Z. Zhang, Y. Guo,
"Schottky barrier height at metal/ZnO interface: A first-principles study",
Microelectronic Engineering, 216, 111056, 2019/7/4.
*11 Z. Zhang, Y. Guo, J. Robertson,
"Atomic structure and band alignment at Al2O3/GaN, Sc2O3/GaN and La2O3/GaN interfaces: A first-principles study",
Microelectronic Engineering, 216, 111039 , 2019/6/5.
*10 E. Asakura, M. Suzuki, S. Karube, J. Nitta, K. Nagashio and M. Kohda,
"Detection of both optical polarization and coherence transfers to excitonic valley states in CVD-grown monolayer MoS2",
Applied Physics Express, 12, 063005, 2019/5/31.
*9 M. Niwa, A. Yasui, H. Honjo, S.Ikeda, T. Nakamura, and T. Endoh,
"Change in chemical bonding state by thermal treatment in MgO-based magnetic tunnel junction observed by angle-resolved hard X-ray photoelectron spectroscopy",
J. Appl. Phys. , 125, 203903, 2019/5/24.
*8 Y. Endo, Y. Kawabea, T. Miyazakid, Y. Shimada,
"Effect of Ga composition on the static and dynamic magnetic properties of Fe100-xGax films (18.5 ≤ x ≤ 33.4)",
Journal of Magnetism and Magnetic Materials, 487, 165323, 2019/5/18.
*7 S. Ye, K. Yamabe, and T. Endoh,
"Oxidation-induced stress in Si nanopillars",
Journal of Materials Science, 54, 11117–11126, 2019/5/10.
*6 H. Gamou, Y. Du, M. Kohda, and J. Nitta,
"Enhancement of spin current generation in epitaxial a-Ta/CoFeB bilayer",
Physical Review B, 99, 184408, 2019/5/9.
*5 Y. Saito, N. Tezuka, S. Ikeda, H. Sato, and T. Endoh,
"Increase in spin-Hall effect and influence of anomalous Nernst effect on spin-Hall magnetoresistance in β-phase and α-phase W100-xTax /CoFeB systems",
Appl. Phys. Express, 12, 053008, 2019/5/1.
*4 Z. Zhang, Y. Guo, J. Robeortson,
"Chemical bonding and band alignment at X2O3/GaN (X = Al, Sc) interfaces",
Applied Physics Letters, 114 161601, 2019/4/26.
*3 S. Toyoda, T. Uwanno, T. Taniguchi, K. Watanabe, and K. Nagashio,
"Pinpoint pick-up and bubble-free assembly of 2D materials using PDMS/PMMA polymers with lens shapes",
Applied Physics Express, 12, 055008, 2019/4/24.

A. Kurenkov, S. DuttaGupta, C. Zhang, S. Fukami, Y. Horio, and H. Ohno,
"Artificial neuron and synapse realized in an antiferromagnet/ferromagnet heterostructure using dynamics of spin-orbit torque switching",
Advanced Materials, 31, 1900636, 2019/4/16.


Y. Saito, A. V. Kolobov, P. Fons, K. V. Mitrofanov, K. Makino, J. Tominaga, J. Robertson,
"Origin of resistivity contrast in interfacial phase-change memory: The crucial role of Ge/Sb intermixing",
Applied Physics Letters, 114, 132102, 2019/4/1.