Tohoku University Center for Innovative Integrated Electoric Systems

Tohoku University

CIES Consortium

National Projects

NEDO project

R&D of GaN bidirectional power converter

  • Tetsuo Endoh Prof.
    Tetsuo Endoh

This project is engaged in R&D on higher-voltage tolerance of GaN-on-Si device (Co-research representative: Prof . T. Endoh) under the “Research and development of GaN Bidirectional power converter” (Project leader: Panasonic Corporation) performed under the strategic innovation program for energy conservation technologies funded by New Energy and Industrial Technology Development Organization (NEDO). High-efficiency power-converter circuit such as inverter and converter is essential for energy-saving. However, since energy conversion efficiency of existing Si devices is approaching the limit due to the material property, GaN devices are expected to realize higher-efficiency drivability than Si devices.
This R&D aims to realize GaN bidirectional power converter with lower energy loss, and establish the practical technologies for power converter with low energy loss and low power consumption. So far, normally-off operation and AC-AC direct conveter have successfully demonstrated.

Basic technology of GaN on Si devices

Basic technology of GaN on Si devices

An application and the benefit of bidirectional power converter by using GaN on Si devices technology

An application and the benefit of bidirectional power converter by using GaN on Si devices technology