Publications
FY 2016
Conferences
Invited talks at international conference
| 45 | T. Hanyu, D. Suzuki and N. Onizawa, "Three-Terminal MTJ-Based Nonvolatile Logic Circuits with Self-Terminated Writing Mechanism for Ultra-Low-Power VLSI Processor", Design, Automation and Test in Europe (DATE 2017), Lausanne, Switzerland, March 29, 2017. |
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| 44 | T. Endoh, "STT-MRAM and its Application for Nonvolatile Brain-Inspired VLSIs”, China Semiconductor Technology International Conference (CSTIC) 2017, Shanghai International Convention Center, Shanghai, China, March 12, 2017. |
| 43 | H. Ohno, "Spin-orbit Torque Nanodevices”, AIMR International Symposium (AMIS), Sendai, Japan, February 16, 2017. |
| 42 | S. Fukami, and H. Ohno, "Nano Spintronics Devices-From Digital to Bio-Inspired Computing-”, International Symposium for Bio-Convergence Spin System, Daegu, Korea, February 10, 2017 |
| 41 | H. Ohno, "Analog spintronics device based artificial neural network" Dagstuhl Seminar 17061: Wildly Heterogeneous Post-CMOS Technologies Meet Software, Schloss Dagstuhl, Germany, February 8, 2017 |
| 40 | H. Ohno, "Nano Spintronics Devices for Integrated Circuit Applications", International Conference on Magnetic Materials and Applications (ICMAGMA), Hyderabad, India, February 3, 2017. |
| 39 | H. Ohno, ”Spin on Integrated Circuits: An Emerging Feld of Spintronics", Conference on 90 years of quantum mechanics, Singapore, Janurary 25, 2017. |
| 38 | T. Endoh, "STT-MRAM and CMOS/MTJ Hybrid NV-Logic for Future Low Power System", SEMICON Japan 2016, Tokyo, Big Sight, Japan, December 6, 2016. |
| 37 | A. Okada, S. He, B. Gu, S. Kanai, A. Soumyanarayanan, S.T. Lim, M. Tran, M. Mori, S. Maekawa, F. Matsukura, H. Ohno, and C. Panagopoulos, "Temperature and tehickness dependencies of ferromagnetic resonance spectra of MgO/CoFeB/MgO", 4th JSPS Core-to-Core Workshop on "New-Concept Spintronic Devices", Tohoku University,Japan, November 19, 2016. |
| 36 | S. Fukami, A. Kurenkov, W. A. Borders, T. Kanemura, T. Anekawa, A. Ohkawara,C. Zhang, S. DuttaGupta, and H. Ohno, "Spin-orbit torque switching for integrated circuits:from sub-ns memory to artificial intelligence", 14th RIEC International Workshop on SPINTRONICS, Tohoku University,Japan, November 18, 2016. |
| 35 | F. Matsukura, E. Hirayama, H. Sato, S. Kanai, and H. Ohno, "Magnetization Switching in Elliptic CoFeB/MgO Magnetic Tunnel Junctions", 14th RIEC International Workshop on SPINTRONICS, Tohoku University,Japan, November 17, 2016. |
| 34 | S. Ikeda, H. Honjo, H. Sato, K. Ito, M. Niwa, H. Ohno and T. Endoh, "Material Design in Developing Advanced CoFeB-MgO Magnetic Tunnel Junctions for Nonvolatile VLSI", JSPS-EPSRC Tohoku-Cambridge-CNRS Core-to-Core Program Symposium "Two dimensional electronics/spintronics devices", Laboratory for Nanoelectronics and Spintronics, RIEC, Tohoku University,Japan, November 16, 2016. |
| 33 | T. Endoh, "Nonvolatile Brain-Inspired VLSIs Based on CMOS/MTJ Hybrid Technology for Ultralow-Power Performance and Compact Chip", 61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 2, 2016. |
| 32 | S. DuttaGupta, S. Fukami, M. Yamanouchi, C. Zhang, H. Sato, F. Matsukura, and H. Ohno, "Adiabatic spin transfer torque induced domain wall creep in a magnetic metal", 61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 1, 2016. |
| 31 | S. Fukami, A. Kurenkov, W. A. Borders, T. Kanemura, C. Zhang, S. DuttaGupta, and H. Ohno, "Magnetization Switching by Spin-Orbit Torque in an Antiferromagnet-Ferromagnet Bilayer System", 61st Annual Conference on Magnetism and Magnetic Materials (MMM2016), New Orleans, USA, November 1, 2016. |
| 30 | M. Natsui, T. Endoh, H. Ohno, and T. Hanyu, "Towards Ultra Low-Power and Highly Dependable VLSI Computing Based on MTJ-Based Nonvolatile Logic-in-Memory Architecture" BIT's 6th Annual World Congress of Nano Science & Technology 2016, p. 358, Singapore, October 26, 2016. |
| 29 | H. Ohno, "High-Speed & External -Magnetic-Field Free Spin-Orbit Switching Devices for VLSI", 8th MRAM Global Innovation Forum 2016, Seoul, Korea, October 26, 2016. |
| 28 | T. Endoh, "STT-MRAM and MTJ/CMOS Hybrid NV-logic for Low Power Systems", EMN LasVegas Meetings, LasVegas, USA, October 12, 2016. |
| 27 | S. Fukami and H. Ohno, "Nonvolatile Spintronics Devicesfor Integrated-Circuit Applications", MAINZ Summer School New Direction in Spintronics Research, Shanghai, China, October 12, 2016. |
| 26 | H. Kageshima, K. Shiraishi, and T. Endoh, "Silicon emission mechanism for oxidation process of non-planar silicon", Electrochemical Society PRiME 2016, Hawaii, USA, October 5, 2016. |
| 25 | H. Ohno, "Nanoscale Two-and Three Terminal Spintronics Devices for VLSI", The 2nd ImPACT International Symposium on Spintronic Memory, Circuit and Storage, Tsukuba, Japan, September 30, 2016. |
| 24 | S. Fukami, A. Kurenkov, W. A. Borders, T. Kanemura, C. Zhang, S. DuttaGupta, and H. Ohno, "Field-free spin-orbit torque induced switching in an antiferromagnet-ferromagnet bilayer system", SPICE Workshop on Antiferromagnetic Spintronics, Johannes Gutenberg University Mainz, Germany, September 28, 2016. |
| 23 | H. Ohno, "Two-and Three-terminal Spintronics Devices for VLSI-Progress in spin-orbit torque devices", Nanomaterials 2016, Nancy, France, September 22, 2016. |
| 22 | H. Ohno, "Spin-orbit switching of magnetization", Second Marie Curie School on Domain Walls and Spintronics, Spetses, Greece, September 15, 2016. |
| 21 | S. Fukami, C. Zhang, T. Anekawa, A. Ohkawara, S. DuttaGupta, A. Kunrekov, and H. Ohno, "Three-terminal spin-orbit torque switching devices", SPIE 2016, San Diego, USA, August 29, 2016. |
| 20 | H. Ohno, "Spintronics Nano-Devices for VLSIs Applications (Plenary) ", 20th International Vacuum Congress (IVC-20), Busan Exhibition Convention Center, Busan, Korea, August 26, 2016. |
| 19 | H. Ohno, "Nanoscale Spintronics Devices (Plenary)", 16th International Conference on Nanotechnology (IEEE NANO), Sendai International Center, Sendai, Japan, August 25, 2016. |
| 18 | T, Shinada, E. Prati, T. Tanii, T. Teraji, S. Onoda, F. Jelezko, J.Isoya, "Deterministic doping to silicon and diamond materials for quantum processing", 2016 IEEE 16th International Conference on Nanotechnology (IEEE NANO 2016), Sendai, Japan, August 25, 2016. |
| 17 | H. Ohno, "Spintronics nano-devices for VLSI integration (Plenary) ", 8th Joint European Magnetic Symposia (JEMS2016), Glasgow, UK, August 22, 2016. |
| 16 | H. Ohno, "Three-terminal Spintronics Devices for CMOS Integration", The 4th International Conference of Asian Union of Magnetics Societies (IcAUMS 2016), National Cheng Kung University, Tainan, Taiwan, August 5, 2016. |
| 15 | H. Ohno, “Spintronics II”, IEEE Magnetic Society Summer School, Sendai, Japan, July 14, 2016. |
| 14 | H. Ohno, “Spintronics I”, IEEE Magnetic Society Summer School, Sendai, Japan, July 14, 2016. |
| 13 | T.Endoh, “High Performance STT-MRAM and 3D NAND Memory with Spintronics and Vertical MOSFET Technology”, SEMICON WEST 2016, San Francisco, USA, July 13, 2016. |
| 12 | H. Ohno, “Three-Terminal Spintronics Devices for VLSI”, International Union of Materials Research Societies-International Conference on Electronic Materials (IUMRS-ICEM 2016) , Singapore, July 6, 2016. |
| 11 | H.Ohno "Spintronics nano-devices for VLSIs" Northwestern University,Materials Science and Engineering Seminar, Evanston, USA, June 30, 2016. |
| 10 | H. Ohno "Spin-orbit torque switching of magnetization" University of Chicago, IME Seminar, Chicago, USA, June 28, 2016. |
| 9 | S. Fukami, C. Zhang, T. Anekawa, A. Ohkawara, S. DuttaGupta, A. Kunrekov, and H. Ohno "Spin-orbit torque induced switching for high-speed and reliable memory devices" 3rd Workshop of the Core-to-Core Project Tohoku-York-Kaiserslautern, Kaiserslautern, Germany, June 22, 2016. |
| 8 | S. Fukami, C. Zhang, S. DuttaGupta, A. Kunrekov, T. Anekawa, and H. Ohno "Current Status and Future Outlook ofThree-Terminal Spintronics Devices" 2016 Spintronics Workshop on LSI, Hawaii, USA, June 13, 2016. |
| 7 | T.Hanyu "Challenge of MOS/MTJ‐Hybrid Nonvolatile VLSI Processor for IoE Applications" VLSI Technology Short Course 2016, Hawaii, USA, June 13, 2016. |
| 6 | T.Hanyu "Challenge of Spintronics-Based Nonvolatile Logic-in-Memory VLSI Architecture towards the IoE Era" 2016 Spintronics Workshop on LSI, Hawaii, USA, June 13, 2016. |
| 5 | H. Ohno "Material efficiency: The case of devices for IoT" World Materials Forum, Nancy, France, June 10, 2016. |
| 4 | H. Ohno "Nano spintronics devices for CMOS integration" 5th International Conference Smart and Multifunctional Materials, Structures and Systems (CIMTEC), Perugia, Italy, June 7, 2016. |
| 3 | S. Fukami, C. Zhang, S. DuttaGupta, A. Kunrekov, T. Anekawa, and H. Ohno "Three-terminal Spintronics Devices for Integrated Circuits" The 7th IEEE International Nanoelectronics Conference 2016 (IEEE INEC 2016), Chengdu, China, May 10, 2016. |
| 2 | H. Ohno "(Plenary）Spintronics Nano-Devices for VLSIs" 5th International Conference on Superconductivity and Magnetism (ICSM),Fethiye, Turkey,April 28,2016 |
| 1 | T. Shinada, E. Prati, T. Tanii, T. Teraji, S. Onoda, F. Jelezko, J. Isoya, "Deterministic doping for quantum processing devices in silicon and diamond" EMN Quantum Meeting on Quantum,Phuket, Thailand,April 8,2016 |