Tohoku University Center for Innovative Integrated Electoric Systems

Tohoku University

J-Innovation HUB

Publications

FY 2013

Journal Papers

*Peer Reviewed Paper

*12 H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/ CoFeB/Ta/CoFeB/MgO recording structure with low intrinsic critical current and high thermal stability",
Journal of the Magnetics Society of Japan, 38, 56-60, 2014/3/20
*11 Hiroki Koike, Takashi Ohsawa, Sadahiko Miura, Hiroaki Honjo, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Tetsuo Endoh,
" Wide operational margin capability of 1 kbit spin-transfer-torque memory array chip with 1-PMOS and 1-bottom-pin-magnetic-tunnel-junction type cell",
Japanese Journal of Applied Physics , 53, 04ED13, 2014/3/24.
*10 S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
“Co/Pt multilayer-based magnetic tunnel junctions with a CoFeB/Ta insertion layer”,
Journal of Applied Physics, 115, 17C719, 2014/2/3
*9 H. Sato, S. Ikeda, S. Fukami, H. Honjo, S. Ishikawa, M. Yamanouchi, K. Mizunuma, F. Matsukura, and H. Ohno,
“Co/Pt multilayer based reference layers in magnetic tunnel junctions for nonvolatile spintronics VLSIs”,
Journal of Applied Physics, 53, 04EM02, 2014/2/12
*8 J. H. Jeong, T. Endoh, Y. Kim, W. K. Kim and S. O. Park,
"Influence of hydrogen patterning gas on electric and magnetic properties of perpendicular magnetic tunnel junctions",
Journal of Applied Physics, 115, 17C727, 2014/2/28.
*7 T. Ohsawa, S. Ikeda, T. Hanyu, H. Ohno and T. Endoh,
"Trend of tunnel magnetoresistance and variation in threshold voltage for keeping data load robustness of metal–oxide–semiconductor/magnetic tunnel junction hybrid latches",
Journal of Applied Physics, 115, 17C728, 2014/2/28.
*6 Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Testuo Endoh,
"Power Reduction by Power Gating in Differential Pair Type STT-MRAMs for Low-Power Nonvolatile Cache Memories",
Japanese Journal of Applied Physics , 53, 04ED04, 2014/2/17.
*5 Takashi Ohsawa, Shoji Ikeda, Takahiro Hanyu, Hideo Ohno and Testuo Endoh,
"A Two-Transistor Bootstrap Type Selective Device for Spin-Transfer-Torque Magnetic Tunnel Junctions",
Japanese Journal of Applied Physics , 53, 04ED03, 2014/2/12.
*4 Shoun Matsunaga,Akira Mochizuki,Tetsuo Endoh,Hideo Ohno and Takahiro Hanyu,
"Design of an energy-efficient 2T-2MTJ nonvolatile TCAM based on a parallel-serial-combined search scheme",
IEICE Electronics Express, 11, 20131006, 2014/2/10.
*3 H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions with Perpendicular Easy Axis",
IEEE Transactions on Magnetics, 49, 4437-4440, 2013/7/15.
*2 K. Mizunuma, M. Yamanouchi, H. Sato, S. Ikeda, S. Kanai, F. Matsukura, and H. Ohno,
"Size Dependence of Magnetic Properties of Nanoscale CoFeB–MgO Magnetic Tunnel Junctions with Perpendicular Magnetic Easy Axis Observed by Ferromagnetic Resonance",
Applied Physics Express, 6, 063002 (1)-(3), 2013/5/22.
*1 S. Ishikawa, H. Sato, M. Yamanouchi, S. Ikeda, S. Fukami, F. Matsukura, and H. Ohno,
"Magnetic properties of MgO-[Co/Pt] multilayers with a CoFeB insertion layer",
Journal of Applied Physics, 113, 17C721 (1)-(3), 2013/4/3.