CIES Consortium

CIES Joint Research

Support for Young Researchers

Magnetic structure analysis for magnetic nanodots using micromagnetic simulation

In this collaborative research, spin dynamics of the double ferromagnetic tunnel junctions (DMTJs) is analyzed by micromagnetics simulation. Nonvolatile magnetic random access memory (MRAM) can realize a low power consumption by rewriting information using spin transfer torque (STT) or/and spin orbit torque (SOT). In the case of ultra-high-density memory using MTJs, the influence of the magnetic dipole interaction between the memory cells appears. However, research on integrated MTJs so far has been designed the distance between the elements is not so dense as much as influencing magnetic dipole interaction. On the other hands, in actual devices, sidewall damage occurs during microfabrication process; however, it is not consider in the simulation so far. In this collaborative research, we calculate the following issues that are important for integrated MTJs device by using micromagnetics simulation.

(i) Magnetic dipole interaction in integrated MTJs
(ii) Influence of sidewall damage on MTJs
(iii) Thermal stability of MTJs by using String method