6th CIES Technology Forum
DAY 2【2020年3月24日（火）】 国際シンポジウム
| 9:30-9:40 | Opening remarks | Tetsuo Endoh (Tohoku University) |
| 9:40-10:20 | Invited talk 1 The position of Spintronics Memories in High Speed AI Applications |
Shigeki Tomishima (Intel) |
| 10:20-11:00 | Invited talk 2 MRAM and Spintronic Integrated Circuits: The Next Chapter and Innovations Needed |
Seung H. Kang (Qualcomm) |
| 11:00-11:40 | Invited talk 3 STT-MRAM Technology Today and the Exciting Possible Roles for MRAM in Future LSI Hardware |
Jon Slaughter (IBM) |
| 11:40-12:20 | Invited talk 4 STT-MRAM Technology beyond Mass Production |
Shinhee Han (Samsung) |
| 12:20-13:40 | Lunch | |
| 13:40-14:20 | Invited talk 5 Materials Requirements of High-Speed and Low-Power Spin-Orbit-Torque Magnetic Random-Access Memory |
Yen-Lin Huang (TSMC) |
| 14:20-15:00 | Invited talk 6 Recent Progress in Spintronics Devices for Next Generation MRAM |
Hiroaki Honjo (Tohoku University) |
| 15:00-15:20 | Break | |
| 15:20-16:00 | Invited talk 7 CAE & Measurement Solution for Power Electronics |
Tomoaki Hara (Siemens) |
| 16:00-16:40 | Invited talk 8 The Latest Technical Trend of Power Devices |
Naoto Fujishima (Fuji Electric) |
| 16:40-17:20 | Invited talk 9 Recent Development and Expectations for Power Electronics Technology in xEV |
Satoshi Hashino (Keihin) |
| 17:20-17:30 | Closing remarks | Shoji Ikeda (Tohoku University) |