東北大学 国際集積エレクトロニクス研究開発センター

東北大学

地域オープンイノベーション拠点

論文など

2021年度

論文

*査読あり

*17 Y.Saito, S.Ikeda, and T.Endoh,
"Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin–orbit torque devices"
Applied Physics Letters, 119, 142401(2021),(1-7),2021/10/4
*16 D.Suzuki, T.Oka, A.Tamakoshi, Y.Takako, and T.Hanyu, "Design framework for an energy-efficient binary convolutional neural network accelerator based on nonvolatile logic" Nonlinear Theory and Its Applications (NOLTA), IEICE,Vol.E12-N,No.4,pp.695--710,Oct. 2021,2021/10/1
*15 T. Li, Y. Ma, K. Yoshikawa, O. Nomura and T. Endoh,
"Energy-efficient Convolution Module with Flexible Bit-adjustment Method and ADC Multiplier Architecture for Industrial IoT"
IEEE Transactions on Industrial Informatics, Early Accessのため未定, 2021/8/19
*14 Y.Saito, N.Tezuka,S.Ikeda,T.Endoh,
"Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers"
PHYSICAL REVIEW B,104, 064439,(1)-(11) 2021/8/23
*13 Y. Sato, T. Nishimura, D. Duanfei, K. Ueno, K. Shinokita, K. Matsuda and K. Nagashio,
"Intrinsic Electronic Transport Properties and Carrier Densities in PtS2 and SnSe2: Exploration of n+-Source for 2D Tunnel FETs"
ADVANCED ELECTRONIC MATERIALS,2021,2100292,(1-8),2021/8/5
*12 H. Lu, J. Robertson, and H. Naganuma,
"Comparison of hexagonal boron nitride and MgO tunnel barriers in Fe,Co magnetic tunnel junctions"
Applied Physics Reviews,8, 031307,(1-15) 2021/8/5
*11 D.Suzuki and T.Hanyu,
Nonvolatile Field-Programmable Gate Array Using a Standard-Cell-Based Design Flow”
IEICE Transactions on Information and Systems, vol. E104-D, no. 8, pp. 1111-1120, 2021/8/1
*10 S.Ye,K.Yamabe,T.Endoh
Ultimate vertical gate-all-around metal–oxide–semiconductor field-effect transistor and its three-dimensional integrated circuits
Materials Science in Semiconductor Processing, 134, 106046 (1-10),2021/7/1
*9 T. Dohi, S. Fukami, and H. Ohno,
"Influence of domain wall anisotropy on the current-induced hysteresis loop shift for quantification of the Dzyaloshinskii-Moriya interaction ",
Physical Review, B 103, 214450(1)-(9) (2021), 2021/6/29
*8 K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V. A. Nguyen, T. Watanabe, S. Ikeda, and T. Endoh,
"Effect of Magnetic Coupling Between Two CoFeB Layers onThermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer",
IEEE Transactions on Magnetics, Early Accessのため未定, 2021/5/27
*7 R. Sharma, R. Mishra, T. Ngo, Y. Guo, S. Fukami, H. Sato, H. Ohno, and H. Yang,
"Electrically connected spin-torque oscillators array for 2.4 GHz WiFi band transmission and energy harvesting",
Nature Communications, 12, 2924, 1-10, 2021/5/18
*6 H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V. A. Nguyen, M. Yasuhira, S. Ikeda, and T. Endoh,
"Perpendicular Magnetic Tunnel Junctions with Four Anti-ferromagnetically Coupled Co/Pt Pinning Layers",
IEEE Transactions on Magnetics, Early Accessのため未定, 2021/5/12
*5 T. Nishimura, T. Kojima, K. Nagashio, M. Niwa,
"Ion conductive character of low-yttria-content yttria-stabilized zirconia at low temperature"
Japanese Journal of Applied Physics,60, SB, SBBF03(1-7),2021/5/1
*4

高橋 良和, 遠藤 哲郎
「最新パワーデバイスとパワエレ集積化技術」
エレクトロニクス実装学会, 24 No.3 p. 215-225, 2021/5/1

*3 S.Ye, K.Yamabe and T.Endoh,
"Oxidation Rate of Silicon Nanopillars",
The Journal of Physical Chemistry C, 125, 8853-8861, 2021/4/20
*2 S. Akamatsu, M. Oogane, Z. Jin, M. Tsunoda and Y. Ando,
"Tunnel magnetoresistance in magnetictunnel junctions with FeAlSi electrode",
AIP Advances, 11, 045027, 2021/4/18
*1 K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V. A. Nguyen, Y. Noguchi, M. Yasuhira, S. Ikeda, and T. Endoh,
"First Demonstration of 25-nm Quad Interface p-MTJ Device With Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM",
IEEE Transactions on Electron Devices, 68, 6, 2680-2685, 2021/4/14