東北大学 国際集積エレクトロニクス研究開発センター

東北大学

論文など

2017年度

論文

*査読あり

*9 F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, Y. Watamura, S. Samukawa, T. Otsuji, and T. Suemitsu,
"Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse",
Solid State Electronics, Vol. 137, pp. 1-5, 2017/8/1.
*8 H. Sato, S. Ikeda, and H. Ohno,
"Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm",
Japanese Journal of Applied Physics, Vol. 56, 0802A6, 2017/7/24.
*7 M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno,
"Magnetic properties of FeV/MgO-based structures",
Applied Physics Express, Vol. 10, 083001, 2017/7/13.
*6 K. Hirose, D. Kobayashi, T. Ito, and T. Endoh,
"Memory reliability of spintronic materials and devices for disaster-resilient computing
against radiation-induced bit flips on the ground",
Japanese Journal of Applied Physics, 56, 0802A5, 2017/6/30.
*5 D. Kobayashi, K. Hirose, T. Makino, S. Onoda, T. Ohshima, S. Ikeda, H. Sato, E. C. I. Enobio, T. Endoh, and H. Ohno,
"Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion
radiation",
Japanese Journal of Applied Physics, 56, 0802B4, 2017/6/22.
*4 Y. Narita, Y. Takahashi, M. Harada, K. Oikawa, D. Kobayashi, K. Hirose, H. Sato, S. Ikeda, T. Endoh, and H. Ohno,
"Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm",
Japanese Journal of Applied Physics, 56, 0802B3, 2017/6/6.
*3 K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
"Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers",
Japanese Journal of Applied Physics, Vol. 56, 0802B2, 2017/6/1.
*2 S. Fukami, and H. Ohno,
"Magnetization switching schemes for nanoscale three-terminal spintronics devices",
Japanese Journal of Applied Physics, Vol. 56, 0802A1, 2017/6/1.
*1 J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna,
"Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices",
Scientific Reports, 7, 45594, 2017/4/4.