東北大学 国際集積エレクトロニクス研究開発センター

東北大学

論文など

2017年度

論文

*査読あり

*40 E. C. I. Enobio, M. Bersweiler, H. Sato, S. Fukami and H. Ohno,
"Evaluation of energy barrier of CoFeB/MgO magnetic tunnel junctions with perpendicular easy axis using retention time measurement",
Japanese Journal of Applied Physics, vol. 57, 04FN08, 2018/3/13
*39 M. Shinozaki, J. Igarashi, H. Sato, and H. Ohno,
"Free-layer size dependence of anisotropy field in nanoscale CoFeB/MgO magnetic tunnel junctions",
Applied Physics Express, vol. 11, 043001, 2018/3/9
*38 D. Suzuki, and T. Hanyu,
"Design of a magnetic-tunnel-junction-oriented nonvolatile lookup table circuit with write-operation-minimized data shifting",
Japanese Journal of Applied Physics, Vol. 57, 04FE09, 2018/3/9
*37 K. Watanabe, B. Jinnai, S. Fukami, H. Sato, and H. Ohno,
"Shape anisotropy revisited in single-digit nanometer magnetic tunnel junctions",
Nature Communications, Vol. 9, 663, 2018/2/14, DOI: 10.1038/s41467-018-03003-7
*36 C. Zhang, S. Fukami, S. DuttaGupta, H. Sato, and H. Ohno,
"Time and spatial evolution of spin–orbit torque-induced magnetization switching in W/CoFeB/MgO structures with various sizes",
Japanese Journal of Applied Physics, Vol. 57, 04FN02, 2018/2/7,
DOI:10.7567/JJAP.57.04FN02
*35 D. Perconte, F. A. Cuellar, C. Moreau-Luchaire, M. Piquemal-Banci, R. Galceran, P.-R. Kidambi, M.-B. Martin, S. Hofmann, R. Bernard, B. Dlubak, P. Seneor, and J.-E. Villegas,
"Tunable Klein-like tunnelling of high-temperature superconducting pairs into graphene",
Nature Physics, 14, 25 (2018), 2018/2/1
*34 Y. Hattori, T. Taniguchi, K. Watanabe, and K. Nagashio,
"Impact ionization and transport properties of hexagonal boron nitride in constant-voltage measurement",
Phys. Rev. B, 2018, 97, 045425, 2018/1/24
*33 N. Fang, and K. Nagashio,
"Band tail interface states and quantum capacitance in a monolayer molybdenum disulfide field-effect-transistor",
J. Phys. D, 2018, 51, 065110, 2018/1/24
*32 M. Suzuki, M. Kohda, S. Takasuna, S. Matsuzaka, Y. Sato, T. Tanabe, Y. Oyama, and J. Nitta,
"Effect of optical waveguide on photoluminescence polarization in layered material GaSe with millimeter scale",
Japanese Journal of Applied Physics, 2018,57, 020308, 2018/1/5
*31 S. Gupta, S. Kanai, F. Matsukura, and H. Ohno,
"Temperature dependence of ferromagnetic resonance spectra of permalloy on (Bi1-xSbx)2Te3",
Japanese Journal of Applied Physics, Vol. 57, 020302, 2017/12/27
*30 K. Prasertsuk, T. Tanikawa, T. kimura, S. Kuboya, T. Suemitsu, and T. Matsuoka,
"N-polar GaN/AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching",
Applied Physics Express, Vol. 11, no. 1, 015503, 2017/12/27
*29 E. Fukuda, T. Endoh, T. Ishikawa, K. Izunome, K. Kamijo, and H. Kageshima,
"Influence of oxygen concentration of Si wafer surface for Si emission on Nano ordered three-dimensional structure devices",
e-J. Surf. Sci. Nanotechnol., Vol.15, pp.127-134, 2017/12/14
*28 H. Lu, Y. Guo, and J. Robertson,
"Charge transfer doping of graphene without degrading carrier mobility",
J Appl Phys., 121, 224304 (2017), 2017/11/10
*27 S. DuttaGupta, T. Kanemura, C. Zhang, A. Kurenkov, S. Fukami, and H. Ohno,
"Spin-orbit torques and Dzyaloshinskii-Moriya interaction in PtMn/[Co/Ni] heterostructures",
Applied Physics Letters, 111, 182412, 2017/11/3
*26 Y. Kunihashi, H. Sanada, Y. Tanaka, H. Gotoh, K. Onomitsu, K. Nakagawara, M. Kohda, and J. Nitta
"Drift-Induced Enhancement of Cubic Dresselhaus Spin-Orbit Interaction in a Two-Dimensional Electron Gas",
Physical Review Letters, 2017,119, 187703, 2017/10/31
*25 H. Honjo, S. Ikeda, H. Sato, K. Nishioka, T. Watanebe, S. Miura, T. Nasuno, Y. Noguchi,M. Yasuhira, T. Tanigawa, H. Koike, H. Inoue, M. Muraguchi, M. Niwa, H. Ohno, and T. Endoh,
"Impact of tungsten sputtering condition on magnetic and transport properties of double-MgO magnetic tunneling junction with CoFeB/W/ CoFeB free layer",
IEEE Transactions on magnetics, Vol.53 No.11pp.1-4, 2017/10/26
*24 W. A. Borders, S. Fukami, and H. Ohno,
"Stack Structure Dependence of Magnetic Properties of PtMn/[Co/Ni] Films for Spin-Orbit Torque Switching Device",
IEEE MAGNETICS LETTERS, Vol. 53, 6000804, 2017/10/24
*23 M. Bersweiler, H. Sato, and H. Ohno,
"Magnetic and Free-Layer Properties of MgO/(Co)FeB/MgO Structures: Dependence on CoFeB Composition",
IEEE MAGNETICS LETTERS, Vol. 8, 3109003, 2017/10/11
*22 M.Niwa, S. Sato, and T. Endoh,
"Interface Control of Advanced Electronic Devices -High-k/Metal Gate System and Magnetic Tunneling Junction",
ECS Transactions, Semiconductors, Dielectrics, and Metals for Nanoelectronics 15: In Memory of Samares Kar, Vol.80, No.1, pp.133-145, 2017/10/1
*21 S. Takasuna, J. Shiogai, S. Matsuzaka, M. Kohda, Y. Oyama, and J. Nitta,
"Weak antilocalization induced by Rashba spin-orbit interaction in layered III-VI compound semiconductor GaSe thin films",
Physical Review B Rapid Communications, 2017, 96, 161303, 2017/10/1
*20 Y. Guo, and J. Robertson,
"Band Structure, Band Offsets, Substitutional Doping, and Schottky Barriers in InSe",
Phys. Rev. Materials, 1, 044004 (2017), 2017/10/1
*19 J. Igarashi, J. landro, H. Sato, F. Matsukura, and H. Ohno,
"Spin-orbit torque induced magnetization switching in Co/Pt multilayers",
Applied Physics Letters, Vol. 111, 132407, doi: 10.1063/1.5004968, 2017/9/28
*18 S. Caneva, M.-B. Martin, L. D’Arsie, I. A. Aria, H. Sezen, M. Amati, L. Gregoratti, H. Sugime, S. Esconjauregui, J. Robertson, S. Hofmann, and R. S. Weatherup,
" From Growth Surface to Device Interface: Preserving Metallic Fe under Monolayer Hexagonal Boron Nitride",
ACS Appl. Mater. Inter, 9, 29973 (2017), 2017/9/10
*17 B. Jinnai, C. Zhang, A. Kurenkov, M. Bersweiler, H. Sato, S. Fukami, and H. Ohno,
"Spin-orbit torque induced magnetization switching in Co/Pt multilayers",
Applied Physics Letters, Vol. 111, 102402, doi: 10.1063/1.5001171, 2017/9/7
*16 S. Gupta, S. Kanai, F. Matsukura, and H. Ohno,
"Magnetic and transport properties of Sb2Te3 doped with high concentration of Cr",
Applied Physics Express, vol. 10, 103001, 2017/9/5
*15 S. Kurabayashi, and K. Nagashio,
"Transport properties of the top and bottom surfaces in monolayer MoS2 grown by chemical vapor deposition",
Nanoscale, 2017, 9, 13264-13271, 2017/8/18
*14 H. Li, Y. Guo, and J. Robertson,
"Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge",
Sci Reports, 7 16669 p.1-p.8 (2017), 2017/8/5
*13 F. Hemmi, C. Thomas, Y.-C. Lai, A. Higo, Y. Watamura, S. Samukawa, T. Otsuji, and T. Suemitsu,
"Neutral beam process in AlGaN/GaN HEMTs: Impact on current collapse",
Solid State Electronics, Vol. 137, pp. 1-5, 2017/8/1.
*12 H. Sato, S. Ikeda, and H. Ohno,
"Magnetic tunnel junctions with perpendicular easy axis at junction diameter of less than 20nm",
Japanese Journal of Applied Physics, Vol. 56, 0802A6, 2017/7/24.
*11 M. Bersweiler, K. Watanabe, H. Sato, F. Matsukura, and H. Ohno,
"Magnetic properties of FeV/MgO-based structures",
Applied Physics Express, Vol. 10, 083001, 2017/7/13.
*10 M. Kohda, and G. Salis,
"Physics and application of persistent spin helix state in semiconductor heterostructures",
Semiconductor Science and Technology, 2017, 32, 073002, 2017/7/1
*9 K. Hirose, D. Kobayashi, T. Ito, and T. Endoh,
"Memory reliability of spintronic materials and devices for disaster-resilient computing
against radiation-induced bit flips on the ground",
Japanese Journal of Applied Physics, 56, 0802A5, 2017/6/30.
*8 D. Kobayashi, K. Hirose, T. Makino, S. Onoda, T. Ohshima, S. Ikeda, H. Sato, E. C. I. Enobio, T. Endoh, and H. Ohno,
"Soft errors in 10-nm-scale magnetic tunnel junctions exposed to high-energy heavy-ion
radiation",
Japanese Journal of Applied Physics, 56, 0802B4, 2017/6/22.
*7 S. Zheng, G. Zhong, X. Wu, L. D'Arsiè, and J. Robertson,
"Metal-catalyst-free growth of graphene on insulating substrates by ammonia-assisted microwave plasma-enhanced chemical vapor deposition",
RSC Advances, 7, 33185 (2017), 2017/6/10
*6 Y. Narita, Y. Takahashi, M. Harada, K. Oikawa, D. Kobayashi, K. Hirose, H. Sato, S. Ikeda, T. Endoh, and H. Ohno,
"Fast neutron tolerance of the perpendicular-anisotropy CoFeB–MgO magnetic tunnel junctions with junction diameters between 46 and 64 nm",
Japanese Journal of Applied Physics, 56, 0802B3, 2017/6/6.
*5 K. Watanabe, S. Fukami, H. Sato, S. Ikeda, F. Matsukura, and H. Ohno,
"Annealing temperature dependence of magnetic properties of CoFeB/MgO stacks on different buffer layers",
Japanese Journal of Applied Physics, Vol. 56, 0802B2, 2017/6/1.
*4 S. Fukami, and H. Ohno,
"Magnetization switching schemes for nanoscale three-terminal spintronics devices",
Japanese Journal of Applied Physics, Vol. 56, 0802A1, 2017/6/1.
*3 K. Nagashio, Y. Hattori, N. Takahashi, T. Taniguchi, K. Watanabe, J. Bao, W. Norimatsu, and M. Kusunoki,
"Electrical Integrity and Anisotropy in Dielectric Breakdown of Layered h-BN Insulator",
ECS Transactions, 2017, 79, 91-97, 2017/5/1
*2 S. Sekizaki, M. Osada, and K. Nagashio,
"Molecularly-thin Anatase field-effect transistors fabricated through the solid state transformation of titania nanosheets",
Nanoscale, 2017, 9, 6471–6477, 2017/4/20
*1 J. J. Bean, M. Saito, S. Fukami, H. Sato, S. Ikeda, H. Ohno, Y. Ikuhara, and K. P. McKenna,
"Atomic structure and electronic properties of MgO grain boundaries in tunnelling magnetoresistive devices",
Scientific Reports, 7, 45594, 2017/4/4.