Poster Session
High density SOT-MRAM memory array based on a single transistor Rana Alhalabi, Leti, technology research institute |
Reduction of write current with ultra-thin spin-Hall effect electrode in Voltage-Control Spintronics Memory (VoCSM) Buyandalai Altansargai , Toshiba Corporation |
Enhancement of HfO2 Based RRAM Performance Through Hexagonal Boron Nitride Interface Layer Yi-Shao Chen, Peking University |
Investigation of vacancy role in the amorphization of GeTe by Au-doping Jinlong Feng, Huazhong University of Science & Technology |
Improvement of Endurance and Data-retention in 40nm TaOX-based ReRAM by Finalize Verify Shouhei Fukuyama, Chuo University |
DFT+NEGF Current Transport Simulations of Resistive Switching Devices Carsten Funck, RWTH Aachen University |
Electrical Characterization of Emerging Non-Volatile Memory (NVM) Chips Abhishek Gupta, Indian Institute of Technology |
Enhancement of thermal stability and operation energy in Sb2Te3 induced by Ag and Cu doping Soobin Hwang, Yonsei University |
Passive Amorphous Silicon Carbide Resistive Random Access Memory Arrays O. Kapur, University of Southampton |
The influence of interfacial (sub)oxide layers on the properties of pristine resistive switching devices Andreas Kindsmüller , RWTH Aachen University |
Maximizing Performance/Cost Figure of Merit of S-SCM-based SSD by Adding Small Capacity of M-SCM Reika Kinoshita, Chuo University |
Transient Joule Heating in PrMnO3 RRAM enables ReLU type Neuron Sandip G. Lashkare, IIT Bombay |
Oxygen tuned amorphous structure of GeSe for stackable selector applications Guangyu Liu, Chinese Academy of Sciences |
Control of structural order and its impact on optical reflectivity contrast of epitaxial GeSbTe thin films Andriy Lotnyk, Leibniz Institute of Surface Engineering (IOM) |
Determination of the Charge Centroid of Holes Trapped in MONOS–Type Memories at High Gate Voltages Hiroshi Mino, Tokai University |
Manufacturing Process Improvement for Forming-free TaOx-based ReRAM by Magnetron Sputtering Method Yuusuke Miyaguchi, ULVAC |
Novel multi-scale modeling paradigm in engineering charge trapping memory devices: From material simulation to prediction of device behavior and cost reduction in engineering 3D NAND Milan Pešić, MDLSoft Inc. |
Understanding the switching mechanism of interfacial phase change memory Yuta Saito, AIST |
Periodic Data Eviction Algorithm of SCM/NAND Flash Hybrid SSD with SCM Retention Time Constraint Capabilities at Extremely High Temperature Atsuya Suzuki, Chuo University |
An Artificial General Intelligence Aspirant: Versatile Tianjic Platform inspired from Brain Pei Tang, Tsinghua University |
Research of Read-Margin Dependence on Array Size for Asymmetric Resistive Memory Cell Zhizhen Yu, Peking University |
Reactive Ion Etching Induced Damage Due to Hydrogen Penetration in Magnetic Tunnel Junctions Yu Zhao, Hitachi, Ltd. |
Hierarchical ReRAM Crossbar Design for Write Variation Inhibition in On-chip Training Qilin Zheng, Peking University |