Day2 (Oct. 23)

8:00 Registration
8:30-9:10 Keynote
8:30-9:10 Overview and Key Technology for embedded MRAM production
Shinhee Han, Samsung
9:10-10:25 S5: PCM 1
Chair: Matthias Wuttig, RWTH Aachen
9:10-9:35 Towards single-elemental phase-change memory
Benedikt Kersting, IBM Research
9:35-10:00 Phase Change Memory Engineering Towards High Energy Efficient Non-Volatile Resistive Memory
Guillaume Bourgeois, LETI
10:00-10:25 Van der Waals Gap Reconfiguration and Role of Antimony in Interfacial Phase-change Memory
Alex Kolobov, National Institute of Advanced Industrial Science & Technology
10:25-10:40 BREAK
10:40-12:20 S6: New Devices/Concepts
Chair: Scott Sills, Micron
10:40-11:05 Two-Dimensional Transition Metal Dichalcogenide Memristors and Memtransistors
Mark Hersam, Northwestern University
11:05-11:30 A Cross Point Cu ReRAM with BC-doped Selector
Shuichiro Yasuda, Sony Semiconductor Solutions Corp.
11:30-11:55 Thermally Stable Te-based Binary OTS Device for Selector Application
Solomon Amsalu Chekol, Pohang University of Science and Technology
11:55-12:20 Nucleic Acid Memory: Current status and future directions
Victor Zhirnov, Semiconductor Research Corporation
12:20-1:30 LUNCH at "HERMITAGE" 3rd floor of the Westin Sendai
1:20-2:00 Keynote
Neuromorphic Computing Devices and Chips
Luping Shi, Tsinghua University
2:00-3:15 S7: Neuoromrphic Applications I
Chair: Rong Zhao, Singapore University of Technology & Design
2:00-2:25 Mixed-signal vector-by-matrix multiplication with nonvolatile memories:Device requirements, circuit options, performance prospects, and early experimental results
Dmitri Strukov, UC Santa Barbara
2:25-2:50 Conductance drift in PCM and its impact on multi-PCM synaptic architectures
Irem Boybat, IBM Research
2:50-3:15 (Withdraw) Brain Inspired Nanoionic Devices and Networks for Efficient Computing
Yuchao Yang, Peking University
3:15-3:40 BREAK
3:40-4:30 S8: Neuromorphic Applications II
Chair : Daisaburo Takashima, Toshiba Memory
3:40-4:05 Study of Si and Zr doped hafnium oxide based FeFET for neuromorphic crossbar architectures
Thomas Kämpfe, Fraunhofer Institute for Photonic Microsystems (IPMS)
4:05-4:30 Artificial Neuron and Synapse via Transient Threshold Switching in Memristive Devices
Rong Zhao, Singapore University of Technology and Design
4:30-4:55 S9: Flash
Chair : Daisaburo Takashima, Toshiba Memory
4:30-4:55 Nitride-based Storage Flash Memory ─ Data Pattern Effects on Trapped Charge Lateral Migration
Yu-Heng Liu, National Chiao-Tung University
4:55-5:20 S10: Modeling
Chair : Daisaburo Takashima, Toshiba Memory
4:55-5:20 Engineering memory devices and accelerators for data centric computing — Multiscale modeling approach
Milan Pešić, MDLSoft Inc.
6:00-8:00 Banquet at "SUZUME" 2nd floor of the Westin Sendai