Day2 (Oct. 23)
| 8:00 | Registration |
|---|---|
| 8:30-9:10 | Keynote |
| 8:30-9:10 | Overview and Key Technology for embedded MRAM production Shinhee Han, Samsung |
| 9:10-10:25 | S5: PCM 1 Chair: Matthias Wuttig, RWTH Aachen |
| 9:10-9:35 | Towards single-elemental phase-change memory Benedikt Kersting, IBM Research |
| 9:35-10:00 | Phase Change Memory Engineering Towards High Energy Efficient Non-Volatile Resistive Memory Guillaume Bourgeois, LETI |
| 10:00-10:25 | Van der Waals Gap Reconfiguration and Role of Antimony in Interfacial Phase-change Memory Alex Kolobov, National Institute of Advanced Industrial Science & Technology |
| 10:25-10:40 | BREAK |
| 10:40-12:20 | S6: New Devices/Concepts Chair: Scott Sills, Micron |
| 10:40-11:05 | Two-Dimensional Transition Metal Dichalcogenide Memristors and Memtransistors Mark Hersam, Northwestern University |
| 11:05-11:30 | A Cross Point Cu ReRAM with BC-doped Selector Shuichiro Yasuda, Sony Semiconductor Solutions Corp. |
| 11:30-11:55 | Thermally Stable Te-based Binary OTS Device for Selector Application Solomon Amsalu Chekol, Pohang University of Science and Technology |
| 11:55-12:20 | Nucleic Acid Memory: Current status and future directions Victor Zhirnov, Semiconductor Research Corporation |
| 12:20-1:30 | LUNCH at "HERMITAGE" 3rd floor of the Westin Sendai |
| 1:20-2:00 | Keynote |
| Neuromorphic Computing Devices and Chips Luping Shi, Tsinghua University |
|
| 2:00-3:15 | S7: Neuoromrphic Applications I Chair: Rong Zhao, Singapore University of Technology & Design |
| 2:00-2:25 | Mixed-signal vector-by-matrix multiplication with nonvolatile memories:Device requirements, circuit options, performance prospects, and early experimental results Dmitri Strukov, UC Santa Barbara |
| 2:25-2:50 | Conductance drift in PCM and its impact on multi-PCM synaptic architectures Irem Boybat, IBM Research |
| 2:50-3:15 | (Withdraw) Brain Inspired Nanoionic Devices and Networks for Efficient Computing Yuchao Yang, Peking University |
| 3:15-3:40 | BREAK |
| 3:40-4:30 | S8: Neuromorphic Applications II Chair : Daisaburo Takashima, Toshiba Memory |
| 3:40-4:05 | Study of Si and Zr doped hafnium oxide based FeFET for neuromorphic crossbar architectures Thomas Kämpfe, Fraunhofer Institute for Photonic Microsystems (IPMS) |
| 4:05-4:30 | Artificial Neuron and Synapse via Transient Threshold Switching in Memristive Devices Rong Zhao, Singapore University of Technology and Design |
| 4:30-4:55 | S9: Flash Chair : Daisaburo Takashima, Toshiba Memory |
| 4:30-4:55 | Nitride-based Storage Flash Memory ─ Data Pattern Effects on Trapped Charge Lateral Migration Yu-Heng Liu, National Chiao-Tung University |
| 4:55-5:20 | S10: Modeling Chair : Daisaburo Takashima, Toshiba Memory |
| 4:55-5:20 | Engineering memory devices and accelerators for data centric computing — Multiscale modeling approach Milan Pešić, MDLSoft Inc. |
| 6:00-8:00 | Banquet at "SUZUME" 2nd floor of the Westin Sendai |