Research

R&D Theme 1 Realization of spintronics devices with higher reliability, higher density and lower power
R&D 1-1 Establishment of new materials and process technologies for quality improvement of MTJ devices
R&D 1-2 Realization of ultra low power new functional devices with new structure spintronics devices
R&D Theme 2 Realization of ultra lower power consumption by spintronics nonvolatile integrated circuits and its measurement technologies
R&D 2-1 Establishment of circuit technologies for ultra low power
R&D 2-2 Realization of high-efficiency and high-precision process equipment for spintronics integrated circuits manufacturing
R&D 2-3 Establishment of high-efficiency and high-precision measurement technologies for spintronics devices
R&D 2-4 Establishment of high-efficiency and high-precision measurement technologies for spintronics integrated circuits
R&D Theme 3 Realization of GaN/Si hybrid power integrated circuits with GaN on Si and Si power devices
R&D 3-1 Establishment of growth technology of high-quality GaN crystal on Si(100) substrate
R&D 3-2 Establishment of next-generation electronic device component technologies with GaN/Si hybrid power integrated circuits
R&D Theme 4 Realization of next generation transportation system by advanced automatic judgement system and hybrid power integrated circuits
R&D 4-1 Establishment of advanced automatic judgement system with high performance nonvolatile analog devices
R&D 4-2 Establishment of digital neural network circuit and architecture technologies for next-generation transportation system